Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy
نویسندگان
چکیده
منابع مشابه
Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy
The surface roughness of gallium arsenide ~001! films produced by metalorganic vapor-phase epitaxy has been studied as a function of temperature and growth rate by in situ scanning tunneling microscopy. Height–height correlation analysis reveals that the root-mean-height difference follows a power-law dependence on lateral separation, i.e., G(L)5kL, up to a critical distance Lc , after which it...
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The selective area, metalorganic vapor-phase epitaxy of gallium arsenide on silicon substrates was investigated. Low-temperature arsenic passivation of the silicon surface was realized at 650 1C. A two-step growth method was used to deposit the GaAs films with an optimum nucleation temperature of 400 1C. Layers nucleated at 350 1C or below were found to be polycrystalline whereas those nucleate...
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متن کاملThe effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide „001..
The effect of an initial saturation coverage of antimony on the growth of indium arsenide quantum dots on gallium arsenide has been studied during metalorganic vapor-phase epitaxy. After depositing one to two bilayers of InAs at 723 K, the samples were quenched, transferred to ultrahigh vacuum, and characterized by scanning tunneling microscopy and x-ray photoelectron spectroscopy. It has been ...
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A comprehensive study of the electroluminescence of four longwavelength microcavity devices with InAs/GaInAs quantum dot active regions emitting near 1.3 μm was conducted. The four molecular beam epitaxial grown samples with AlAs oxide aperture confinement layers were fabricated, characterized, and optically modeled. Optical power transmission of the samples was modeled using Matlab and compare...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 1998
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(98)00644-7